VISHAY · FETs & Power MOSFETs · MPN SI2319DS-T1-E3
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 82mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 470pF |
P-Channel 40V 3A 1.25W Surface Mount SOT-23-3