VISHAY · FETs & Power MOSFETs · MPN SI2319DDS-T1-GE3
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| RDS(on) | 100mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 650pF |
| Type | P-Channel |
P-Channel 40V 3.6A 1.7W Surface Mount SOT-23