VISHAY SI2319CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2319CDS-T1-BE3

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Specifications

Gate Charge(Qg)7nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)76pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)77mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)595pF
TypeP-Channel

Technical details

P-Channel 40V 3.1A 1.6W Surface Mount SOT-23(TO-236)

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