VISHAY · FETs & Power MOSFETs · MPN SI2318CDS-T1-BE3
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 4.3A;5.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.25W;2.1W |
| RDS(on) | 42mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 340pF |
N-Channel 40V 4.3A 5.6A 1.25W 2.1W Surface Mount SOT-23(TO-236)