VISHAY SI2318CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2318CDS-T1-BE3

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)4.3A;5.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.25W;2.1W
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)340pF

Technical details

N-Channel 40V 4.3A 5.6A 1.25W 2.1W Surface Mount SOT-23(TO-236)

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