VISHAY · FETs & Power MOSFETs · MPN SI2316DS-T1-E3
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 960mW |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 85mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 215pF |
| Type | N-Channel |
30V 3.4A 800mV 960mW 85mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS