VISHAY · FETs & Power MOSFETs · MPN SI2316BDS-T1-GE3
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| Gate Charge(Qg) | 3.16nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 80mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
30V 4.5A 3V 800mW 80mΩ@4.5V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS