VISHAY · FETs & Power MOSFETs · MPN SI2316BDS-T1-E3
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| Gate Charge(Qg) | 9.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.25W;1.66W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
30V 3.9A 3V 50mΩ@10V 1 N-channel TO-236-3 Single FETs, MOSFETs RoHS