VISHAY · FETs & Power MOSFETs · MPN SI2314EDS-T1-GE3
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| Gate Charge(Qg) | 14nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 33mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 120pF |
20V 4.9A 950mV 1.25W 33mΩ@4.5V 1 N-channel TO-236-3 Single FETs, MOSFETs RoHS