VISHAY · FETs & Power MOSFETs · MPN SI2312CDS-T1-BE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 18nC@5V |
| Current - Continuous Drain(Id) | 5A;6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W;2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 31.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 865pF |
20V 1V 31.8mΩ@4.5V 1 N-channel SOT-23(TO-236) Single FETs, MOSFETs RoHS