VISHAY · FETs & Power MOSFETs · MPN SI2312BDS-T1-E3
No reviews yet — be the first to review VISHAY SI2312BDS-T1-E3.
| Gate Charge(Qg) | 7.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 480mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 47mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 20V 5A 0.48W Surface Mount SOT-23