VISHAY · FETs & Power MOSFETs · MPN SI2312BDS-T1-BE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 12nC@4.5V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 47mΩ@1.8V |
| Number | 1 N-channel |
| Type | N-Channel |
20V 5A 850mV 800mW 47mΩ@1.8V 1 N-channel N-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS