VISHAY · FETs & Power MOSFETs · MPN SI2309CDS-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 4.1nC@4.5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 450mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 210pF |
P-Channel 60V 1.6A 1.7W Surface Mount SOT-23-3