VISHAY · FETs & Power MOSFETs · MPN SI2309CDS-T1-E3
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| Gate Charge(Qg) | 2.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 345mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 210pF |
P-Channel 60V 1.6A Surface Mount SOT-23