VISHAY SI2309CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2309CDS-T1-BE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)-
Current - Continuous Drain(Id)1.2A;1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1W;1.7W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)345mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)210pF

Technical details

P-Channel 60V 1.2A 1.6A 1W 1.7W Surface Mount SOT-23(TO-236)

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