VISHAY · FETs & Power MOSFETs · MPN SI2308CDS-T1-GE3
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| Gate Charge(Qg) | 1.05nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 144mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 105pF |
N-Channel 60V 2.6A 0.9W Surface Mount SOT-23