VISHAY · FETs & Power MOSFETs · MPN SI2308BDS-T1-BE3
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| Gate Charge(Qg) | 2.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.09W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 156mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
N-Channel 60V 2.1A 1.09W Surface Mount SOT-23