VISHAY SI2307CDS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2307CDS-T1-GE3

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Specifications

Gate Charge(Qg)6.2nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)138mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)340pF
TypeP-Channel

Technical details

P-Channel 30V 3.5A 1.8W Surface Mount SOT-23

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