VISHAY · FETs & Power MOSFETs · MPN SI2307BDS-T1-BE3
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 750mW |
| RDS(on) | 78mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 380pF |
30V 2.5A 3V 750mW 78mΩ@10V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS