VISHAY · FETs & Power MOSFETs · MPN SI2305CDS-T1-BE3
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| Drain to Source Voltage | 8V |
|---|---|
| Gate Charge(Qg) | 30nC@8V |
| Current - Continuous Drain(Id) | 4.4A;5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 960mW;1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 35mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 960pF |
8V 1V 35mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS