VISHAY · FETs & Power MOSFETs · MPN SI2304DDS-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -40℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
N-Channel 30V 4A 1.2W Surface Mount SOT-23-3(TO-236-3)