VISHAY SI2304DDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2304DDS-T1-BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)4A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF

Technical details

N-Channel 30V 4A 1.2W Surface Mount SOT-23-3(TO-236-3)

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