VISHAY · FETs & Power MOSFETs · MPN SI2304BDS-T1-GE3
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| Gate Charge(Qg) | 2.6nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 690mW |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
| Type | N-Channel |
N-Channel 30V 3.2A 0.69W Surface Mount SOT-23