VISHAY SI2303CDS-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI2303CDS-T1-GE3

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2.7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)330mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)155pF
TypeP-Channel

Technical details

P-Channel 30V 2.7A 1.5W Surface Mount SOT-23(TO-236)

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