VISHAY SI2303CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2303CDS-T1-BE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)35mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)300pF

Technical details

P-Channel 30V 3A 0.8W Surface Mount SOT-23-3(TO-236-3)

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