VISHAY · FETs & Power MOSFETs · MPN Si2302CDS-T1-GE3
No reviews yet — be the first to review VISHAY Si2302CDS-T1-GE3.
| Gate Charge(Qg) | 3.5nC@10V,4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 850mV |
| Pd - Power Dissipation | 550mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 75mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±8V |
N-Channel 20V 2.9A 0.55W Surface Mount SOT-23