VISHAY SI2301CDS-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI2301CDS-T1-E3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)142mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF
TypeP-Channel

Technical details

P-Channel 20V 3.1A 1.6W Surface Mount SOT-23

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