VISHAY · FETs & Power MOSFETs · MPN SI2301CDS-T1-BE3
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| Gate Charge(Qg) | 3.3nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 860mW |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 112mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 405pF |
P-Channel 20V 2.3A 0.86W Surface Mount SOT-23(TO-236)