VISHAY SI2301CDS-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI2301CDS-T1-BE3

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Specifications

Gate Charge(Qg)3.3nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation860mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)112mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)405pF

Technical details

P-Channel 20V 2.3A 0.86W Surface Mount SOT-23(TO-236)

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