VISHAY · FETs & Power MOSFETs · MPN SI2301BDS-T1-BE3
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 100mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 375pF |
20V 2.4A 950mV 900mW 100mΩ@4.5V 1 P-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS