VISHAY SI1967DH-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1967DH-T1-BE3

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Specifications

Current - Continuous Drain(Id)1.3A
Pd - Power Dissipation1.25W
RDS(on)790mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)16pF
Number2 P-Channel
Input Capacitance(Ciss)110pF
Gate Charge(Qg)4nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)26pF

Technical details

P-Channel 20V 1.3A 1.25W Surface Mount SC-70-6

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