VISHAY · FETs & Power MOSFETs · MPN SI1965DH-T1-GE3
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| Current - Continuous Drain(Id) | 1.3A |
|---|---|
| RDS(on) | 390mΩ@4.5V |
| Pd - Power Dissipation | 800mW |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Drain to Source Voltage | 12V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 120pF |
| Gate Charge(Qg) | 4.2nC@8V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 12V 1.3A 0.8W Surface Mount SOT-363