VISHAY · FETs & Power MOSFETs · MPN SI1965DH-T1-BE3
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| Current - Continuous Drain(Id) | 1.14A;1.3A |
|---|---|
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 710mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 12V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 120pF |
| Gate Charge(Qg) | 4.2nC@8V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 41pF |
1.25W 710mΩ@1.8V 1V 2 P-Channel SC-70-6 FET, MOSFET Arrays RoHS