VISHAY · FETs & Power MOSFETs · MPN SI1926DL-T1-BE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.4nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 370mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| RDS(on) | 3Ω@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 18.5pF |
| Type | N-Channel |
N-Channel Array 60V 0.37A 0.3W Surface Mount SC-70-6