VISHAY · FETs & Power MOSFETs · MPN SI1922EDH-T1-GE3
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| Current - Continuous Drain(Id) | 1.3A |
|---|---|
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 263mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 2.5nC@8V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
1.3A 1.25W 263mΩ@1.8V 1V 2 N-Channel SC-70-6(SOT-363) FET, MOSFET Arrays RoHS