VISHAY · FETs & Power MOSFETs · MPN SI1922EDH-T1-BE3
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| Current - Continuous Drain(Id) | 1.3A |
|---|---|
| Pd - Power Dissipation | 740mW;1.25W |
| RDS(on) | 198mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 2.5nC@8V |
| Operating Temperature | -55℃~+150℃ |
1.3A 198mΩ@4.5V 1V 2 N-Channel SC-70-6 FET, MOSFET Arrays RoHS