VISHAY · FETs & Power MOSFETs · MPN SI1902DL-T1-E3
No reviews yet — be the first to review VISHAY SI1902DL-T1-E3.
| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 700mA |
| RDS(on) | 385mΩ@4.5V |
| Pd - Power Dissipation | 160mW |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 1.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
700mA 385mΩ@4.5V 160mW 1.5V 2 N-Channel SOT-363-6 FET, MOSFET Arrays RoHS