VISHAY · FETs & Power MOSFETs · MPN SI1902DL-T1-BE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 1.2nC |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 700mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 270mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 630mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
20V 700mA 1.5V 270mW 630mΩ@2.5V 2 N-Channel N-Channel SC-70-6 Single FETs, MOSFETs RoHS