VISHAY · FETs & Power MOSFETs · MPN SI1902CDL-T1-BE3
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| Current - Continuous Drain(Id) | 1.1A |
|---|---|
| Pd - Power Dissipation | 300mW |
| RDS(on) | 306mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 62pF |
| Gate Charge(Qg) | 1.4nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 20pF |
1.1A 300mW 306mΩ@2.5V 1.5V 2 N-Channel SC-70-6 FET, MOSFET Arrays RoHS