VISHAY · FETs & Power MOSFETs · MPN SI1900DL-T1-GE3
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| Gate Charge(Qg) | 1.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 630mA;590mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 300mW;270mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 480mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
30V 3V 480mΩ@10V 2 N-Channel SOT-363-6 Single FETs, MOSFETs RoHS