VISHAY · FETs & Power MOSFETs · MPN SI1900DL-T1-E3
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| Current - Continuous Drain(Id) | 630mA |
|---|---|
| Pd - Power Dissipation | 160mW |
| RDS(on) | 480mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 1.4nC@10V |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 0.63A 0.16W Surface Mount SC-70-6(SOT-363)