VISHAY · FETs & Power MOSFETs · MPN SI1499DH-T1-GE3
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| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 2.5W;2.78W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 78mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 650pF |
P-Channel 8V 1.6A 2.5W 2.78W Surface Mount SOT-363