VISHAY SI1499DH-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1499DH-T1-BE3

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Specifications

Drain to Source Voltage8V
Gate Charge(Qg)16nC@4.5V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation2.78W
Reverse Transfer Capacitance (Crss@Vds)122pF
RDS(on)424mΩ@1.2V
Number1 P-Channel
Input Capacitance(Ciss)650pF
TypeP-Channel

Technical details

P-Channel 8V 1.6A 2.78W Surface Mount SC-70-6

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