VISHAY · FETs & Power MOSFETs · MPN SI1480DH-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 2.7nC@4.5V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 54pF |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 320mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 130pF |
100V 2.6A 3V 1.8W 320mΩ@4.5V 1 N-channel N-Channel SC-70-6(SOT-363) Single FETs, MOSFETs RoHS