VISHAY · FETs & Power MOSFETs · MPN SI1480BDH-T1-GE3
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2.38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 270mΩ@4.5V |
| Type | N-Channel |
100V 2.38A 3V 2.6W 270mΩ@4.5V N-Channel SC-70-6 Single FETs, MOSFETs RoHS