VISHAY SI1469DH-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI1469DH-T1-E3

No reviews yet — be the first to review VISHAY SI1469DH-T1-E3.

Specifications

Configuration-
Gate Charge(Qg)8.5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.78W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)155mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)470pF

Technical details

P-Channel 20V 2.7A 1.78W Surface Mount SC-70-6(SOT-363)

Related FETs & Power MOSFETs