VISHAY SI1469DH-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1469DH-T1-BE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)8.5nC@4.5V
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.78W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)155mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)470pF
TypeP-Channel

Technical details

20V 2.7A 1.5V 1.78W 155mΩ@2.5V 1 P-Channel P-Channel SC-70-6 Single FETs, MOSFETs RoHS

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