VISHAY · FETs & Power MOSFETs · MPN SI1467DH-T1-GE3
No reviews yet — be the first to review VISHAY SI1467DH-T1-GE3.
| Gate Charge(Qg) | 13.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.5W;2.78W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 90mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 561pF |
20V 2.7A 90mΩ@4.5V 1 P-Channel SOT-363-6 Single FETs, MOSFETs RoHS