VISHAY · FETs & Power MOSFETs · MPN SI1467DH-T1-BE3
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| Gate Charge(Qg) | 9nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.78W |
| Reverse Transfer Capacitance (Crss@Vds) | 89pF |
| RDS(on) | 150mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 561pF |
| Type | P-Channel |
20V 2.7A 1V 1.78W 150mΩ@1.8V 1 P-Channel P-Channel SC-70-6 Single FETs, MOSFETs RoHS