VISHAY SI1442DH-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1442DH-T1-BE3

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Specifications

Gate Charge(Qg)13.1nC
Drain to Source Voltage12V
Output Capacitance(Coss)323pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)30mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)1.01nF
TypeN-Channel

Technical details

12V 4A 1V 2.8W 30mΩ@1.8V 1 N-channel N-Channel SC-70-6 Single FETs, MOSFETs RoHS

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