VISHAY · FETs & Power MOSFETs · MPN SI1441EDH-T1-GE3
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| Output Capacitance(Coss) | - |
|---|---|
| Pd - Power Dissipation | 1.6W |
| Configuration | - |
| Gate Charge(Qg) | 33nC@8V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 41mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
1.6W 20V 4A 400mV 41mΩ@4.5V 1 P-Channel P-Channel SOT-363-6 Single FETs, MOSFETs RoHS