VISHAY SI1441EDH-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1441EDH-T1-BE3

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Specifications

Gate Charge(Qg)12.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.8W
RDS(on)41mΩ@4.5V
Number1 P-Channel
TypeP-Channel

Technical details

20V 4A 1V 2.8W 41mΩ@4.5V 1 P-Channel P-Channel SC-70-6 Single FETs, MOSFETs RoHS

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