VISHAY SI1424EDH-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1424EDH-T1-GE3

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Specifications

Gate Charge(Qg)6nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)33mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 20V 4A 1.56W Surface Mount SC-70-6

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